WP820***

20V, 20m惟, 6A, N-Channel Enhancement Mode Power MOSFET

1.Features

鈼� High Power and current handing capability

鈼� Lead free product is acquired

鈼� Surface Mount Package

2.Applications

鈼� Battery Protection

鈼� Battery Powered Systems

鈼� Power Management in Notebook Computer

鈼� Portable Equipment

Pin Description

SOT23-6

VDS Typ.

RDS(on) Typ.

ID Max.

20V

20m惟 @ 4.5V

6A

27m惟 @ 2.5V

Schematic Diagram

3.Absolute Max Ratings at Ta=25鈩� (Note1)

Parameter

Symbol

Maximum

Units

Drain to Source Voltage

VDSS

19

V

Gate to Source Voltage

VGSS

卤12

V

Drain Current-Continuous

ID

6

A

Drain Current (Pulse)

IDM

20

A

Maximum Power Dissipation

PD

1.9

W

Operating Junction and Storage Temperature Range

Tj锛孴stg

-55 to +150

鈩�

Lead Temperature for Soldering Purposes

(1/8鈥� from case for 10 s)

TL

260

鈩�

Note 1: Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of

these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may

be affected.

S1

D1/D2

S2

G1

D1/D2

G2

Rev.1.1 WAN SEMICONDUCTOR (NINGBO) CO.,LTD 2

WP820***

4.Electrical Characteristics at Ta=25鈩� (Note 2)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Drain to Source Breakdown Voltage

V(BR)DSS

ID = 250渭A, VGS = 0V

19

V

Zero-Gate Voltage Drain Current

IDSS

VDS = 18V, VGS = 0V

1

渭A

Gate-Body Leakage Current

IGSS

VGS = 卤12V, VDS = 0V

卤100

nA

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=250渭A

0.5

0.75

1.5

V

Drain to Source On-State

Resistance

RDS(on)

ID = 6A, VGS = 4.5V

20

25

m惟

ID = 2A, VGS = 2.5V

27

35

m惟

Input Capacitance

Ciss

VGS=0V,

VDS=10V,

Frequency=1.0MHz

370

pF

Output Capacitance

Coss

89

pF

Reverse Transfer Capacitance

Crss

10

pF

Turn-ON Delay Time

td(on)

VDD = 10V, ID = 3A,

VGS = 4.5V, RGEN =

10惟

200

ns

Turn-ON Rise Time

tr

236

ns

Turn-OFF Delay Time

td(off)

36

ns

Turn-ON Fall Time

tf

165

ns

Total Gate Charge

Qg

VDS = 10V,

VGS = 4.5V,

ID = 1A

7.5

nC

Gate-Source Charge

Qgs

3.0

nC

Gate-Drain Charge

Qgd

1.5

nC

Diode Forward Voltage

VSD

IS = 2.8A, VGS = 0V

0.7

1.3

V

Note 2锛歅roduct parametric performance is indicated in the Electrical Characteristics for the listed test

conditions, unless otherwise noted. Product performance may not be indicated by the Electrical

Characteristics if operated under different conditions.

Rev.1.1 WAN SEMICONDUCTOR (NINGBO) CO.,LTD 3

WP820***

5.Typical electrical and thermal characteristics

Figure 1 Output Characteristics Figure 2 Transfer Characteristics

Figure 5 Rds(on) vs. Temperature Figure 6 Source to Drain vs. Temperature

Figure 3 Thershold Voltage vs. Temperature Figure 4 BVDSS vs. Temperature

Rev.1.1 WAN SEMICONDUCTOR (NINGBO) CO.,LTD 4

WP820***

Figure 11 Maximum Transient Thermal Impedence

Figure 9 Safe Operating Area Figure 10 Maximum Drain Current vs. Case Temperature

Figure 7 Capacitance Figure 8 Gate Charge

Rev.1.1 WAN SEMICONDUCTOR (NINGBO) CO.,LTD 5

WP820***

6.Package Dimensions

Rev.1.1 WAN SEMICONDUCTOR (NINGBO) CO.,LTD 6

WP820***

7.Important Notice

WAN SEMICONDUCTOR (NINGBO) CO.,LTD reserves the right to make corrections, enhancements,

improvements and other changes to its semiconductor products and services and to discontinue any product

or service. Buyers should obtain the latest relevant information before placing orders and should verify that

such information is current and complete. All semiconductor products (also referred to herein as

鈥渃omponents鈥�) are sold subject to WANSEMI鈥檚 terms and conditions of sale supplied at the time of order

acknowledgment.

WANSEMI warrants performance of its components to the specifications applicable at the time of sale, in

accordance with the warranty in WANSEMI鈥檚 terms and conditions of sale of semiconductor products. Testing

and other quality control techniques are used to the extent WANSEMI deems necessary to support this

warranty. Except where mandated by applicable law, testing of all parameters of each component is not

necessarily performed.

WANSEMI assumes no liability for applications assistance or the design of Buyers鈥� products. Buyers are

responsible for their products and applications using WANSEMI components. To minimize the risks

associated with Buyers鈥� products and applications, Buyers should provide adequate design and operating

safeguards.

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equipment) unless authorized officers of the parties have executed a special agreement specifically governing

such use.

Unless WANSEMI has specifically designated certain components which meet ***/TS16949

requirements, mainly for automotive use, WANSEMI will not be responsible for any failure of such

components to meet such requirements.